Characteristics of GaN-Based Photonic Crystal Surface Emitting Lasers with Central Defects

Full metadata record

DC Field	Value	Language
dc.contributor.author	Wu, Tzeng-Tsong	en_US
dc.contributor.author	Weng, Peng-Hsiang	en_US
dc.contributor.author	Hou, Yen-Ju	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.date.accessioned	2014-12-08T15:29:21Z	-
dc.date.available	2014-12-08T15:29:21Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-55752-933-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21140	-
dc.description.abstract	The GaN-based Photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The characteristics for PCSELs with different central defects were calculated and matched well with experimental results. (c) 2011 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics of GaN-Based Photonic Crystal Surface Emitting Lasers with Central Defects	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000310362401174	-
Appears in Collections:	Conferences Paper