2.4/5.7-GHz Dual-Band Dual-Conversion Low-IF Downconverter Using 0.35 mu m SiGe HBT Technology

doi:10.1149/1.3487565

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Syu, J. -S.	en_US
dc.contributor.author	Meng, C. C.	en_US
dc.contributor.author	Yu, S. -W.	en_US
dc.contributor.author	Huang, G. -W.	en_US
dc.date.accessioned	2014-12-08T15:29:21Z	-
dc.date.available	2014-12-08T15:29:21Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-60768-175-5	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21146	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3487565	en_US
dc.description.abstract	A 2.4/5.7-GHz dual-band dual-conversion low-IF downconverter is demonstrated using 0.35 mu m SiGe heterojunction bipolar transistor (HBT) technology. The first image signal is shifted away from the IF band by a complex Weaver architecture while the second image signal is eliminated by a complex Hartley architecture. The downconverter achieves a 45/44-dB image-rejection ratio of the first image (IRR1) and a 50/48-dB image-rejection ratio of the second image (IRR2) for 2.4/5.7-GHz modes, respectively, when IF frequency ranges from 20 to 40 MHz.	en_US
dc.language.iso	en_US	en_US
dc.title	2.4/5.7-GHz Dual-Band Dual-Conversion Low-IF Downconverter Using 0.35 mu m SiGe HBT Technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3487565	en_US
dc.identifier.journal	SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES	en_US
dc.citation.volume	33	en_US
dc.citation.issue	6	en_US
dc.citation.spage	349	en_US
dc.citation.epage	353	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000314957600036	-
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