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| Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy | 116 |
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| Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy | 0 | 0 | 0 | 1 | 3 | 0 | 0 |
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