Using BCl3-Based Plasma to Modify Wet-Etching Pattern Sapphire Substrate for Improving the Growth of GaN-Based LEDs

doi:10.1109/LPT.2013.2238226

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Bo-Wen	en_US
dc.contributor.author	Niu, Chen-Yi	en_US
dc.contributor.author	Hsieh, Cheng-Yu	en_US
dc.contributor.author	Wang, Bau-Ming	en_US
dc.contributor.author	Hsu, Wen-Ching	en_US
dc.contributor.author	Lin, Ray-Ming	en_US
dc.contributor.author	Wu, Yew Chung Sermon	en_US
dc.date.accessioned	2014-12-08T15:29:30Z	-
dc.date.available	2014-12-08T15:29:30Z	-
dc.date.issued	2013-02-15	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2013.2238226	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21215	-
dc.description.abstract	Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.	en_US
dc.language.iso	en_US	en_US
dc.subject	BCl3	en_US
dc.subject	light-emitting diode (LED)	en_US
dc.subject	pattern	en_US
dc.subject	sapphire	en_US
dc.title	Using BCl3-Based Plasma to Modify Wet-Etching Pattern Sapphire Substrate for Improving the Growth of GaN-Based LEDs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2013.2238226	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	25	en_US
dc.citation.issue	4	en_US
dc.citation.spage	371	en_US
dc.citation.epage	373	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000314684400015	-
dc.citation.woscount	1	-
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