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dc.contributor.authorHuang, Wei-Chingen_US
dc.contributor.authorChang, Edward-Yien_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorLin, Kung-Liangen_US
dc.contributor.authorHsiao, Yu-Linen_US
dc.contributor.authorDee, Chang Fuen_US
dc.contributor.authorMajlis, Burhanuddin Yeopen_US
dc.date.accessioned2014-12-08T15:29:33Z-
dc.date.available2014-12-08T15:29:33Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0126-6039en_US
dc.identifier.urihttp://hdl.handle.net/11536/21250-
dc.description.abstractThe AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results showed that lower pressure provides a tendency for higher Al incorporating in the AlInN layer. Besides, as the temperature was increased from 700 degrees C to 780 degrees C, an estimation of 4% reduction on the indium composition has been observed for each 20 degrees C increment. XRD analysis showed that the best crystal quality of AlInN occured at 80% Al composition because of the higher lattice matching with GaN. Based on the above criteria, an Al0.8In0.2N/GaN HEMT device with 2 mu m gate length has also been fabricated. The DC characteristics showed a saturated current, I-dss of 280 mA/mm and transconductance of 140 mS/mm.en_US
dc.language.isoen_USen_US
dc.subjectAlInN layeren_US
dc.subjectGaNen_US
dc.subjectMOCVDen_US
dc.titleCharacterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVDen_US
dc.typeArticleen_US
dc.identifier.journalSAINS MALAYSIANAen_US
dc.citation.volume42en_US
dc.citation.issue2en_US
dc.citation.spage247en_US
dc.citation.epage250en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000315129700019-
dc.citation.woscount0-
Appears in Collections:Articles