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dc.contributor.authorYu, Shu-Hungen_US
dc.contributor.authorHo, Po-Chingen_US
dc.contributor.authorLee, Chia-Lingen_US
dc.contributor.authorBi, Chien-Chungen_US
dc.contributor.authorYeh, Chih-Hungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:29:33Z-
dc.date.available2014-12-08T15:29:33Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.7567/APEX.6.022301en_US
dc.identifier.urihttp://hdl.handle.net/11536/21252-
dc.description.abstractWe adopt a economical and original method to fabricate self-textured gallium-doped zinc oxide (GZO) front contacts for hydrogenated amorphous silicon (a-Si: H) single-junction solar cells. This technique involves an atmospheric-pressure plasma jet (APPJ) and a dc sputtering process. The electro-optical characteristics of the textured GZO films are mainly controlled by the haze of organosilicon underlayers deposited by the APPJ. The films exhibit an average optical transmittance of about 80% and resistivity below 9.91 x 10(-4) Omega cm. Moreover, compared with flat solar cells, textured cells fabricated on moderate GZO front contacts show 7.9 and 10.9% enhancements in conversion efficiency and short-circuit current density, respectively. (C) 2013 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleCost-Effective and Self-Textured Gallium-Doped Zinc Oxide Front Contacts for Hydrogenated Amorphous Silicon Thin-Film Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/APEX.6.022301en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume6en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000314748200017-
dc.citation.woscount5-
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