標題: | Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory |
作者: | Chen, Yu-Ting Chang, Ting-Chang Huang, Jheng-Jie Tseng, Hsueh-Chih Yang, Po-Chun Chu, Ann-Kuo Yang, Jyun-Bao Huang, Hui-Chun Gan, Der-Shin Tsai, Ming-Jinn Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 28-Jan-2013 |
摘要: | This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film. Through material analyses, a self-assembled layer is observed in the Mo-doped SiO2 film. Due to the formation of this layer, the thickness required to be broken down is effectively reduced. Subsequently, the occurrence of the switching behavior in the thinner SiO2 film further confirmed the supposition. A comparison of the two switching behaviors shows that SiO2 dominates the switching characteristic of the Mo-doped SiO2. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790277] |
URI: | http://dx.doi.org/10.1063/1.4790277 http://hdl.handle.net/11536/21263 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4790277 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 102 |
Issue: | 4 |
結束頁: | |
Appears in Collections: | Articles |
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