標題: Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
作者: Chen, Yu-Ting
Chang, Ting-Chang
Huang, Jheng-Jie
Tseng, Hsueh-Chih
Yang, Po-Chun
Chu, Ann-Kuo
Yang, Jyun-Bao
Huang, Hui-Chun
Gan, Der-Shin
Tsai, Ming-Jinn
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 28-Jan-2013
摘要: This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film. Through material analyses, a self-assembled layer is observed in the Mo-doped SiO2 film. Due to the formation of this layer, the thickness required to be broken down is effectively reduced. Subsequently, the occurrence of the switching behavior in the thinner SiO2 film further confirmed the supposition. A comparison of the two switching behaviors shows that SiO2 dominates the switching characteristic of the Mo-doped SiO2. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790277]
URI: http://dx.doi.org/10.1063/1.4790277
http://hdl.handle.net/11536/21263
ISSN: 0003-6951
DOI: 10.1063/1.4790277
期刊: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 4
結束頁: 
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