HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES

doi:10.1143/JJAP.34.L1

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	KAO, MJ	en_US
dc.contributor.author	HSU, WC	en_US
dc.contributor.author	SHIEH, HM	en_US
dc.contributor.author	LIU, WC	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:03:35Z	-
dc.date.available	2014-12-08T15:03:35Z	-
dc.date.issued	1995-01-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.34.L1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2126	-
dc.description.abstract	Double-quantum-well GaAs/InGaAs/GaAs pseudomorphic heterostructures by delta-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10(13) cm-2 along with an enhanced mobility of 2100 cm2/V.s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.	en_US
dc.language.iso	en_US	en_US
dc.subject	DELTA-DOPING	en_US
dc.subject	HFET	en_US
dc.subject	DDCFET	en_US
dc.subject	MOCVD	en_US
dc.subject	INGAAS/GAAS QW	en_US
dc.subject	HIGH CARRIER DENSITY	en_US
dc.subject	HIGH MOBILITY	en_US
dc.title	HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.34.L1	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	1A	en_US
dc.citation.spage	L1	en_US
dc.citation.epage	L3	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1995QC36800001	-
dc.citation.woscount	6	-
顯示於類別：	期刊論文