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dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorZhuang, W. Z.en_US
dc.contributor.authorLiang, H. C.en_US
dc.contributor.authorWHuang, G.en_US
dc.contributor.authorSu, K. W.en_US
dc.date.accessioned2014-12-08T15:29:35Z-
dc.date.available2014-12-08T15:29:35Z-
dc.date.issued2013-01-01en_US
dc.identifier.issn1612-2011en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1612-2011/10/1/015803en_US
dc.identifier.urihttp://hdl.handle.net/11536/21277-
dc.description.abstractWe report on the operation of a high-power diode-pumped Yb:YAG self-mode-locked microchip laser with a pulse repetition rate of up to 240 GHz. The gain medium is coated to form a cavity mirror and to act as an etalon for achieving harmonic mode locking. A diamond heat spreader is employed to reduce the thermal effects for power scale-up. At an absorbed pump power of 8.3 W, an average output power of 4.6 W is achieved with a pulse duration of 630 fs and a repetition rate of 240 GHz.en_US
dc.language.isoen_USen_US
dc.titleHigh-power subpicosecond harmonically mode-locked Yb:YAG laser with pulse repetition rate up to 240 GHzen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1612-2011/10/1/015803en_US
dc.identifier.journalLASER PHYSICS LETTERSen_US
dc.citation.volume10en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000315459700014-
dc.citation.woscount5-
Appears in Collections:Articles


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