完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Y. F. | en_US |
dc.contributor.author | Zhuang, W. Z. | en_US |
dc.contributor.author | Liang, H. C. | en_US |
dc.contributor.author | WHuang, G. | en_US |
dc.contributor.author | Su, K. W. | en_US |
dc.date.accessioned | 2014-12-08T15:29:35Z | - |
dc.date.available | 2014-12-08T15:29:35Z | - |
dc.date.issued | 2013-01-01 | en_US |
dc.identifier.issn | 1612-2011 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/1612-2011/10/1/015803 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21277 | - |
dc.description.abstract | We report on the operation of a high-power diode-pumped Yb:YAG self-mode-locked microchip laser with a pulse repetition rate of up to 240 GHz. The gain medium is coated to form a cavity mirror and to act as an etalon for achieving harmonic mode locking. A diamond heat spreader is employed to reduce the thermal effects for power scale-up. At an absorbed pump power of 8.3 W, an average output power of 4.6 W is achieved with a pulse duration of 630 fs and a repetition rate of 240 GHz. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High-power subpicosecond harmonically mode-locked Yb:YAG laser with pulse repetition rate up to 240 GHz | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/1612-2011/10/1/015803 | en_US |
dc.identifier.journal | LASER PHYSICS LETTERS | en_US |
dc.citation.volume | 10 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000315459700014 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |