完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Ray, S. C. | en_US |
dc.contributor.author | Hsueh, H. C. | en_US |
dc.contributor.author | Wu, C. H. | en_US |
dc.contributor.author | Pao, C. W. | en_US |
dc.contributor.author | Asokan, K. | en_US |
dc.contributor.author | Liu, M. T. | en_US |
dc.contributor.author | Tsai, H. M. | en_US |
dc.contributor.author | Chuang, C. H. | en_US |
dc.contributor.author | Pong, W. F. | en_US |
dc.contributor.author | Chiou, J. W. | en_US |
dc.contributor.author | Tsai, M. -H. | en_US |
dc.contributor.author | Lee, J. M. | en_US |
dc.contributor.author | Jang, L. Y. | en_US |
dc.contributor.author | Chen, J. M. | en_US |
dc.contributor.author | Lee, J. F. | en_US |
dc.date.accessioned | 2014-12-08T15:29:52Z | - |
dc.date.available | 2014-12-08T15:29:52Z | - |
dc.date.issued | 2011-07-25 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3607475 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21416 | - |
dc.description.abstract | This work investigates local atomic and electronic structures of PbZr(0.52)Ti(0.48)O(3) (PZT) thin films with < 001 >, < 101 >, and < 111 > orientations using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near-edge structure (XANES) spectroscopy with theta = 0 degrees and 70 degrees incident angles. The EXAFS result indicates that the < 001 >-oriented PZT film has a polarization dominantly along the c-axis, while both < 101 >- and < 111 >-oriented PZT films have a dominant in-ab-plane polarization. The hysteresis-loop measurements show that the < 001 >-oriented PZT film has a much larger coercive field than those of other two PZT films, which indicates that the double-well potential along the c-axis is much deeper than that in the ab-plane. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607475] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Loycal atomic and electronic structures and ferroelectric properties of PbZr(0.52)Ti(0.48)O(3): An x-ray absorption study | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3607475 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 99 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | en_US | |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
顯示於類別: | 期刊論文 |