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dc.contributor.authorWu, Tzeng-Tsongen_US
dc.contributor.authorWu, Shu-Hsienen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:29:53Z-
dc.date.available2014-12-08T15:29:53Z-
dc.date.issued2013-02-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4794081en_US
dc.identifier.urihttp://hdl.handle.net/11536/21429-
dc.description.abstractGaN-based high contrast grating surface-emitting lasers (HCG SELs) with AlN/GaN distributed Bragg reflectors were reported. The device exhibited a low threshold pumping energy density of about 0.56 mJ/cm(2) and the lasing wavelength was at 393.6 nm with a high degree of polarization of 73% at room temperature. The specific lasing mode and polarization characterisitcs agreed well with the theoretical modeling. The low threshold characteristics of our GaN-based HCG SELs faciliated by the Fano resonance can serve as the best candidate in blue surface emitting laser sources. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794081]en_US
dc.language.isoen_USen_US
dc.titleGaN-based high contrast grating surface-emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4794081en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume102en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000315597000011-
dc.citation.woscount2-
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