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dc.contributor.authorLiu, Yen-Tingen_US
dc.contributor.authorChiu, Shang-Juien_US
dc.contributor.authorLee, Hsin-Yien_US
dc.contributor.authorChen, San-Yuanen_US
dc.date.accessioned2014-12-08T15:29:54Z-
dc.date.available2014-12-08T15:29:54Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2012.07.073en_US
dc.identifier.urihttp://hdl.handle.net/11536/21446-
dc.description.abstractSymmetric superlattice structures of multiferroic BiFeO3 and conductive LaNiO3 sublayers were grown on a Nb-doped SrTiO3 substrate with radio-frequency magnetron-sputtering. The formation of a superlattice structure was confirmed from the appearance of satellite lines on both sides of the main line in the X-ray diffraction pattern. X-ray measurements show that these superlattice films become subject to greater tensile stress along the c-axis and to increased compressive stress parallel to the surface plane with a decreasing thickness of the sublayer. The smaller is the thickness of the sublayer, the greater is the crystalline quality and the strain state. The hysteresis loops show a large leakage current at frequencies of 0.5 and 1 kHz; the polarization decreases with an increasing frequency. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSuperlatticeen_US
dc.subjectRF sputteringen_US
dc.subjectX-ray scatteringen_US
dc.titleFabrication and ferroelectric properties of BiFeO3/LaNiO3 artificial superlattice structures grown by radio-frequency magnetron-sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2012.07.073en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume529en_US
dc.citation.issueen_US
dc.citation.spage66en_US
dc.citation.epage70en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.identifier.wosnumberWOS:000315928000016-
dc.citation.woscount1-
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