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dc.contributor.authorChiu, Shang-Juien_US
dc.contributor.authorLiu, Yen-Tingen_US
dc.contributor.authorYu, Ge-Pingen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.contributor.authorHuang, Jia-Hongen_US
dc.date.accessioned2014-12-08T15:29:54Z-
dc.date.available2014-12-08T15:29:54Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2012.02.033en_US
dc.identifier.urihttp://hdl.handle.net/11536/21447-
dc.description.abstractImprovement of ferroelectric property by Lanthanum (La)-doping of BiFeO3 (BFO) and strain effect of high quality superlattice films deposited at temperature. >= 700 degrees C was shown in this study. The in-pane (200) radial scans showed that films at deposition temperature above 700 degrees C behaved high strained similar to-1.4% and showed epitaxity properties. The La-doped BFO superlattice structure also behaved higher polarization value similar to 197 mu C/cm(2) and lower leakage current density comparing with BFO superlattice structure shown in our previous study. The ferroelectric properties of superlattice structures are enhanced by lattice strain and strongly correlated with the defect state of films. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSuperlatticeen_US
dc.subjectStrainen_US
dc.subjectrf sputteringen_US
dc.subjectLa-doped BFOen_US
dc.subjectFerroelectric propertyen_US
dc.titleThe structure and ferroelectric property of La-doped BiFeO3/SrTiO3 artificial superlattice structure by rf sputtering: Effect of deposition temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2012.02.033en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume529en_US
dc.citation.issueen_US
dc.citation.spage85en_US
dc.citation.epage88en_US
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.identifier.wosnumberWOS:000315928000020-
dc.citation.woscount1-
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