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dc.contributor.authorTeng, I-Juen_US
dc.contributor.authorHsu, Hui-Linen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorWang, Li-Chunen_US
dc.contributor.authorChen, Kai-Lingen_US
dc.contributor.authorKuo, Cheng-Tzuen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorWang, Wei-Hsiangen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:29:55Z-
dc.date.available2014-12-08T15:29:55Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2012.09.019en_US
dc.identifier.urihttp://hdl.handle.net/11536/21451-
dc.description.abstractThe electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current-voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current-voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of similar to 14.5 cm(2)/V.s and an on-off current ratio of -10(3). Moreover, when the CNT-NW-assisted devices are irradiated with 1.25-25 mu m infrared (IR) from 300 to 11 K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at +/- 2 V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectElectrical propertiesen_US
dc.subjectPhoto-sensing propertiesen_US
dc.subjectCarbon nanotube networks (CNT-NWs)en_US
dc.subjectCNT-NW-assisted devicesen_US
dc.subjectMicrowave plasma chemical vapor depositionen_US
dc.subjectSandwich-growthen_US
dc.subjectHorizontally-oriented interconnecteden_US
dc.titleTemperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2012.09.019en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume529en_US
dc.citation.issueen_US
dc.citation.spage190en_US
dc.citation.epage194en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000315928000043-
dc.citation.woscount0-
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