完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Teng, I-Ju | en_US |
dc.contributor.author | Hsu, Hui-Lin | en_US |
dc.contributor.author | Jian, Sheng-Rui | en_US |
dc.contributor.author | Wang, Li-Chun | en_US |
dc.contributor.author | Chen, Kai-Ling | en_US |
dc.contributor.author | Kuo, Cheng-Tzu | en_US |
dc.contributor.author | Pan, Fu-Ming | en_US |
dc.contributor.author | Wang, Wei-Hsiang | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2014-12-08T15:29:55Z | - |
dc.date.available | 2014-12-08T15:29:55Z | - |
dc.date.issued | 2013-02-01 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2012.09.019 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21451 | - |
dc.description.abstract | The electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current-voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current-voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of similar to 14.5 cm(2)/V.s and an on-off current ratio of -10(3). Moreover, when the CNT-NW-assisted devices are irradiated with 1.25-25 mu m infrared (IR) from 300 to 11 K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at +/- 2 V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications. (C) 2012 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Electrical properties | en_US |
dc.subject | Photo-sensing properties | en_US |
dc.subject | Carbon nanotube networks (CNT-NWs) | en_US |
dc.subject | CNT-NW-assisted devices | en_US |
dc.subject | Microwave plasma chemical vapor deposition | en_US |
dc.subject | Sandwich-growth | en_US |
dc.subject | Horizontally-oriented interconnected | en_US |
dc.title | Temperature-dependent electrical and photo-sensing properties of horizontally-oriented carbon nanotube networks synthesized by sandwich-growth microwave plasma chemical vapor deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.tsf.2012.09.019 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 529 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 190 | en_US |
dc.citation.epage | 194 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000315928000043 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |