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dc.contributor.authorShu, G. W.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorJian, H. T.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorChou, C. L.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.date.accessioned2019-04-03T06:43:00Z-
dc.date.available2019-04-03T06:43:00Z-
dc.date.issued2013-01-14en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.21.00A123en_US
dc.identifier.urihttp://hdl.handle.net/11536/21466-
dc.description.abstractSpatially-resolved electroluminescence (EL) images in the triple junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed. (C)2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleOptical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.21.00A123en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume21en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000315988100013en_US
dc.citation.woscount16en_US
Appears in Collections:Articles


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