标题: | Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells |
作者: | Shu, G. W. Lin, J. Y. Jian, H. T. Shen, J. L. Wang, S. C. Chou, C. L. Chou, W. C. Wu, C. H. Chiu, C. H. Kuo, H. C. 电子物理学系 光电工程学系 光电工程研究所 Department of Electrophysics Department of Photonics Institute of EO Enginerring |
公开日期: | 14-一月-2013 |
摘要: | Spatially-resolved electroluminescence (EL) images in the triple junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed. (C)2012 Optical Society of America |
URI: | http://dx.doi.org/10.1364/OE.21.00A123 http://hdl.handle.net/11536/21466 |
ISSN: | 1094-4087 |
DOI: | 10.1364/OE.21.00A123 |
期刊: | OPTICS EXPRESS |
Volume: | 21 |
Issue: | 1 |
起始页: | 0 |
结束页: | 0 |
显示于类别: | Articles |
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