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dc.contributor.authorWu, K. H.en_US
dc.contributor.authorChen, H. -J.en_US
dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2014-12-08T15:30:02Z-
dc.date.available2014-12-08T15:30:02Z-
dc.date.issued2013-04-01en_US
dc.identifier.issn1557-1939en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10948-012-2037-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/21506-
dc.description.abstractIn this paper, (001)-oriented hexagonal YMnO3 (h-YMO) thin films with various nominal strain states were deposited on MgO(100), MgO(111), and YSZ(111) substrates by pulsed laser deposition. The in-plane orientation alignment and substrate-induced epitaxial strain between the h-YMO films and substrates are examined by X-ray diffraction (XRD) theta-2 theta, I broken vertical bar, and omega scans. The effects of epitaxial strain on the on-site Mn d-d transition energy E (dd) (T), and the N,el temperature (T (N)) in these thin films are investigated by wavelength-tunable ultrafast pump-probe techniques. We find that the changes of E (dd) (T) and T (N) depend on the type and magnitude of the epitaxial strain. The possible mechanisms for the observed strain effect on the electronic structure and associated magnetism are discussed.en_US
dc.language.isoen_USen_US
dc.subjectHexagonal YMnO3 thin filmsen_US
dc.subjectStrain effecten_US
dc.subjectCrystalline structuresen_US
dc.subjectTemperature-dependent Mn d to d transition energyen_US
dc.subjectMagnetization measurementen_US
dc.titleEpitaxial-Strain Effects on Electronic Structure and Magnetic Properties of Hexagonal YMnO3 Thin Films Studied by Femtosecond Spectroscopyen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1007/s10948-012-2037-8en_US
dc.identifier.journalJOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISMen_US
dc.citation.volume26en_US
dc.citation.issue4en_US
dc.citation.spage801en_US
dc.citation.epage807en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000317014500014-
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