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dc.contributor.authorChu, Li-Weien_US
dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorTsai, Shiang-Yuen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorSong, Ming-Hsiangen_US
dc.contributor.authorJou, Chewn-Puen_US
dc.contributor.authorLu, Tse-Huaen_US
dc.contributor.authorTseng, Jen-Chouen_US
dc.contributor.authorTsai, Ming-Hsienen_US
dc.contributor.authorHsu, Tsun-Laien_US
dc.contributor.authorHung, Ping-Fangen_US
dc.contributor.authorChang, Tzu-Hengen_US
dc.date.accessioned2014-12-08T15:30:06Z-
dc.date.available2014-12-08T15:30:06Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-0219-7en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/21577-
dc.description.abstractNanoscale CMOS technologies have been widely used to implement radio-frequency (RF) integrated circuits. However, the thinner gate oxide and silicided drain/source in nanoscale CMOS technologies seriously degrade the electrostatic discharge (ESD) robustness of RF circuits. Against ESD damage, on-chip ESD protection design must be included in RF circuits. As the RF circuits operating in the higher frequency band, the parasitic effect from ESD protection devices and/or circuits must be strictly limited. To provide the effective ESD protection for a 60-GHz low-noise amplifier (LNA) with less RF performance degradation, a new ESD protection design was studied in a 65-nm CMOS process. Such ESD-protected LNA with simulation/measurement results has been successfully verified in silicon chip to to achieve the 2-kV HBM ESD robustness with the lower power loss in a smaller layout area.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic discharge (ESD)en_US
dc.subjectradio frequency (RF)en_US
dc.subjectV banden_US
dc.titleCompact and Low-Loss ESD Protection Design for V-Band RF Applications in a 65-nm CMOS Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012)en_US
dc.citation.spage2127en_US
dc.citation.epage2130en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000316903702084-
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