完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chu, Li-Wei | en_US |
dc.contributor.author | Lin, Chun-Yu | en_US |
dc.contributor.author | Tsai, Shiang-Yu | en_US |
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.contributor.author | Song, Ming-Hsiang | en_US |
dc.contributor.author | Jou, Chewn-Pu | en_US |
dc.contributor.author | Lu, Tse-Hua | en_US |
dc.contributor.author | Tseng, Jen-Chou | en_US |
dc.contributor.author | Tsai, Ming-Hsien | en_US |
dc.contributor.author | Hsu, Tsun-Lai | en_US |
dc.contributor.author | Hung, Ping-Fang | en_US |
dc.contributor.author | Chang, Tzu-Heng | en_US |
dc.date.accessioned | 2014-12-08T15:30:06Z | - |
dc.date.available | 2014-12-08T15:30:06Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.isbn | 978-1-4673-0219-7 | en_US |
dc.identifier.issn | 0271-4302 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21577 | - |
dc.description.abstract | Nanoscale CMOS technologies have been widely used to implement radio-frequency (RF) integrated circuits. However, the thinner gate oxide and silicided drain/source in nanoscale CMOS technologies seriously degrade the electrostatic discharge (ESD) robustness of RF circuits. Against ESD damage, on-chip ESD protection design must be included in RF circuits. As the RF circuits operating in the higher frequency band, the parasitic effect from ESD protection devices and/or circuits must be strictly limited. To provide the effective ESD protection for a 60-GHz low-noise amplifier (LNA) with less RF performance degradation, a new ESD protection design was studied in a 65-nm CMOS process. Such ESD-protected LNA with simulation/measurement results has been successfully verified in silicon chip to to achieve the 2-kV HBM ESD robustness with the lower power loss in a smaller layout area. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Electrostatic discharge (ESD) | en_US |
dc.subject | radio frequency (RF) | en_US |
dc.subject | V band | en_US |
dc.title | Compact and Low-Loss ESD Protection Design for V-Band RF Applications in a 65-nm CMOS Technology | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) | en_US |
dc.citation.spage | 2127 | en_US |
dc.citation.epage | 2130 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.identifier.wosnumber | WOS:000316903702084 | - |
顯示於類別: | 會議論文 |