Polariton Lasing in a ZnO-based Microcavity up to 353K

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lai, Ying-Yu	en_US
dc.contributor.author	Lan, Yu-Pin	en_US
dc.contributor.author	Huang, Si-Wei	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:30:07Z	-
dc.date.available	2014-12-08T15:30:07Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-4577-0828-2	en_US
dc.identifier.issn	2326-5442	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21590	-
dc.description.abstract	We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.	en_US
dc.language.iso	en_US	en_US
dc.title	Polariton Lasing in a ZnO-based Microcavity up to 353K	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)	en_US
dc.citation.spage	143	en_US
dc.citation.epage	144	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000316820100072	-
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