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dc.contributor.authorLi, Chang-Hungen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorYu, Chih-Kuanen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2014-12-08T15:30:10Z-
dc.date.available2014-12-08T15:30:10Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4577-1766-6en_US
dc.identifier.issn1930-0395en_US
dc.identifier.urihttp://hdl.handle.net/11536/21612-
dc.description.abstractA high-sensitivity gas sensor based on SCLT is demonstrated in this paper. The oxidizing and reducing gases which act as electron dedoping (e-dedoping) and doping (e-doping) agents on the transistor active layer is investigated. Dedoping and doping the active layer varies the potential distribution in the vertical channel, and changes the output current density. The lowest detectable concentration of ammonia was 30 ppb at a base-to-emitter voltage as -0.2 V and collector-to-emitter voltage as -1.2 V.en_US
dc.language.isoen_USen_US
dc.titleInvestigating the Gas Sensing Mechanism of the Vertical Polymer Space-Charge-Limited Transistoren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE SENSORS PROCEEDINGSen_US
dc.citation.spage912en_US
dc.citation.epage914en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000315671100220-
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