完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, Chang-Hung | en_US |
dc.contributor.author | Zan, Hsiao-Wen | en_US |
dc.contributor.author | Yu, Chih-Kuan | en_US |
dc.contributor.author | Meng, Hsin-Fei | en_US |
dc.date.accessioned | 2014-12-08T15:30:10Z | - |
dc.date.available | 2014-12-08T15:30:10Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.isbn | 978-1-4577-1766-6 | en_US |
dc.identifier.issn | 1930-0395 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21612 | - |
dc.description.abstract | A high-sensitivity gas sensor based on SCLT is demonstrated in this paper. The oxidizing and reducing gases which act as electron dedoping (e-dedoping) and doping (e-doping) agents on the transistor active layer is investigated. Dedoping and doping the active layer varies the potential distribution in the vertical channel, and changes the output current density. The lowest detectable concentration of ammonia was 30 ppb at a base-to-emitter voltage as -0.2 V and collector-to-emitter voltage as -1.2 V. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Investigating the Gas Sensing Mechanism of the Vertical Polymer Space-Charge-Limited Transistor | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2012 IEEE SENSORS PROCEEDINGS | en_US |
dc.citation.spage | 912 | en_US |
dc.citation.epage | 914 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000315671100220 | - |
顯示於類別: | 會議論文 |