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dc.contributor.authorLee, Sheng-Chengen_US
dc.contributor.authorChiueh, Hermingen_US
dc.date.accessioned2014-12-08T15:30:11Z-
dc.date.available2014-12-08T15:30:11Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4577-1766-6en_US
dc.identifier.issn1930-0395en_US
dc.identifier.urihttp://hdl.handle.net/11536/21624-
dc.description.abstractA proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm(2), is fabricated using the TSMC 0.18 mu m one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50 degrees C to 150 degrees C, archiving a 3 sigma resolution of +/- 0.8 degrees C.en_US
dc.language.isoen_USen_US
dc.titleA 69 mu W CMOS Smart Temperature Sensor with an Inaccuracy of +/- 0.8 degrees C (3 sigma) from-50 degrees C to 150 degrees Cen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE SENSORS PROCEEDINGSen_US
dc.citation.spage1987en_US
dc.citation.epage1990en_US
dc.contributor.department電機資訊學士班zh_TW
dc.contributor.departmentUndergraduate Honors Program of Electrical Engineering and Computer Scienceen_US
dc.identifier.wosnumberWOS:000315671100474-
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