ELECTRICAL CHARACTERIZATION OF ARSENIC-ION-IMPLANTED SEMIINSULATING GAAS BY CURRENT-VOLTAGE MEASUREMENT

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIN, GR	en_US
dc.contributor.author	CHEN, WC	en_US
dc.contributor.author	CHANG, CS	en_US
dc.contributor.author	PAN, CL	en_US
dc.date.accessioned	2014-12-08T15:03:39Z	-
dc.date.available	2014-12-08T15:03:39Z	-
dc.date.issued	1994-12-19	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.112434	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2173	-
dc.language.iso	en_US	en_US
dc.title	ELECTRICAL CHARACTERIZATION OF ARSENIC-ION-IMPLANTED SEMIINSULATING GAAS BY CURRENT-VOLTAGE MEASUREMENT	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.112434	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	65	en_US
dc.citation.issue	25	en_US
dc.citation.spage	3272	en_US
dc.citation.epage	3274	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:A1994PX64100036	-
dc.citation.woscount	24	-
顯示於類別：	期刊論文