Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kuo, Li-Min | en_US |
| dc.contributor.author | Chen, Kuan-Neng | en_US |
| dc.contributor.author | Chuang, Yi-Lin | en_US |
| dc.contributor.author | Chao, Shuchi | en_US |
| dc.date.accessioned | 2014-12-08T15:30:26Z | - |
| dc.date.available | 2014-12-08T15:30:26Z | - |
| dc.date.issued | 2013 | en_US |
| dc.identifier.issn | 2162-8742 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/21765 | - |
| dc.identifier.uri | http://dx.doi.org/10.1149/2.004303ssl | en_US |
| dc.description.abstract | A diode-like current-voltage characteristic in response to hydrogen-ions based on a WO3/IrO2 diode coated with a membrane-like Al2O3 is reported. Microsensors fabricated with the oxides (IrO2 and WO3) will suffer from interference errors in pH-measurements due to their strong responses to environmental redox species. With ionic-conductive and insulation properties, the membrane can mediate the transport of released protons and block the electrons from redox species in solutions. Invoking proton-electron double injection, H+ and e(-) produce redox reactions, which control the conductivity and preserve the continuity of currents across the interface with a good sensitivity (0.168 mu A/pH) between pH = 2 to 12. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.004303ssl] All rights reserved. | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | A Flexible pH-Sensing Structure Using WO3/IrO2 Junction with Al2O3 Encapsulation Layer | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1149/2.004303ssl | en_US |
| dc.identifier.journal | ECS SOLID STATE LETTERS | en_US |
| dc.citation.volume | 2 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | P28 | en_US |
| dc.citation.epage | P30 | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:000318343200005 | - |
| dc.citation.woscount | 1 | - |
| Appears in Collections: | Articles | |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

