完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Tao-Chi | en_US |
dc.contributor.author | Huang, Yi-Sa | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.date.accessioned | 2014-12-08T15:30:26Z | - |
dc.date.available | 2014-12-08T15:30:26Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.issn | 2162-8742 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21766 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.009302ssl | en_US |
dc.description.abstract | We investigate the cross-interaction in Cu/SnAg/Ni microbumps with a reduced solder thickness of 30 and 10 mu m. The concentration of Ni atoms at the opposite site increased with the decrease in solder-height. A considerable concentration gradient of Ni was detected in 10-mu m microbumps sample, which strongly triggers the diffusion of Ni atoms to the Cu side. The diffused Ni atoms at Cu side form the ternary intermetallic compounds of (Cu,Ni)(6)Sn-5, which possesses a lower free energy than Cu6Sn5 does. Eventually, the growth of the Cu3Sn was inhibited due to the formation of the thermodynamically stable (Cu, Ni) 6Sn5. (C) 2012 The Electrochemical Society. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Concentration Gradient of Ni in Reduced SnAg Thickness in Ni/SnAg/Cu Microbumps during Solid-State Aging | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.009302ssl | en_US |
dc.identifier.journal | ECS SOLID STATE LETTERS | en_US |
dc.citation.volume | 2 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | P15 | en_US |
dc.citation.epage | P18 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000318342500005 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |