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dc.contributor.authorKang, Ting-Tingen_US
dc.contributor.authorKomiyama, Susumuen_US
dc.contributor.authorUeda, Takejien_US
dc.contributor.authorLin, Shi-Weien_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2014-12-08T15:30:27Z-
dc.date.available2014-12-08T15:30:27Z-
dc.date.issued2013-01-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2012.2191767en_US
dc.identifier.urihttp://hdl.handle.net/11536/21773-
dc.description.abstractFor charge-sensitive infrared phototransistors (CSIP), it is observed that "conductance decrease," which is contrary to the standard "conductance increase" photon response, can also happen after absorbing infrared light. By experimental modeling the charge-up detection mechanism of CSIP via a capacitive way, we clarify that " conductance decrease" should be attributed to the significantly reduced low quantum well electron mobility after the photon-charging process, rather than a reversed electron transfer. This experimental result clearly indicates that photon-induced charges are able to modify the electron mobility in those "charge-sensitive sensor" types of semiconductor quantum single-photon detectors.en_US
dc.language.isoen_USen_US
dc.subjectChargeen_US
dc.subjectdetectoren_US
dc.subjectdouble quantum wellen_US
dc.subjectinfrareden_US
dc.subjectmobilityen_US
dc.subjectphototransistoren_US
dc.titleAn Anomalous Conductance Decrease in Charge Sensitive Infrared Phototransistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2012.2191767en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume19en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000317779700022-
dc.citation.woscount0-
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