標題: | Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs |
作者: | Yeh, Kuo-Liang Guo, Jyh-Chyurn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | f(MAX);f(T);multifinger;nanoscale CMOS;narrow width;N F-min;RF noise;R-g |
公開日期: | 1-一月-2013 |
摘要: | The impact of narrow-width effects on high-frequency performance like f(T), f(MAX), and RF noise parameters, such as NFmin and R-n, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower R-g and higher f(MAX). However, these narrow-OD devices suffer f(T) degradation and higher NFmin, even with the advantage of lower R-g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology. |
URI: | http://dx.doi.org/10.1109/TED.2012.2228196 http://hdl.handle.net/11536/21789 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2012.2228196 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 60 |
Issue: | 1 |
起始頁: | 109 |
結束頁: | 116 |
顯示於類別: | 期刊論文 |