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dc.contributor.authorLiang, Y. C.en_US
dc.contributor.authorChen, C.en_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:30:31Z-
dc.date.available2014-12-08T15:30:31Z-
dc.date.issued2012en_US
dc.identifier.issn2162-8742en_US
dc.identifier.urihttp://hdl.handle.net/11536/21798-
dc.identifier.urihttp://dx.doi.org/10.1149/2.002204sslen_US
dc.description.abstractA processing failure of void formation has been observed in 3D IC microbumps due to small solder volume. We prepared the sandwiched Ni/Sn2.3Ag/Ni microbumps with 4 mu m and 11 mu m thick solders and reflowed them at 260 degrees C to study the mechanism of void formation in the processing. Due to the thin solder, intermetallic compound formation of Ni3Sn4 from the two interfaces of the solder joint can physically bridge each other. When that happens, the degree of freedom of motion in the direction normal to the interfaces is removed. Consequently, when the remaining molten solder is drained by side wall reaction, large voids form in the joint. This is a unique mode of processing failure because of the smaller and smaller volume of solder joints in the trend of miniaturization. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.002204ssl] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleSide Wall Wetting Induced Void Formation due to Small Solder Volume in Microbumps of Ni/SnAg/Ni upon Reflowen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.002204sslen_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.citation.volume1en_US
dc.citation.issue4en_US
dc.citation.spageP60en_US
dc.citation.epageP62en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000318340300004-
dc.citation.woscount0-
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