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完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorYu, Shu-Hungen_US
dc.contributor.authorHo, Po-Chingen_US
dc.contributor.authorYang, Teng-Weien_US
dc.contributor.authorBi, Chien-Chungen_US
dc.contributor.authorYeh, Chih-Hungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:30:31Z-
dc.date.available2014-12-08T15:30:31Z-
dc.date.issued2012en_US
dc.identifier.issn2162-8742en_US
dc.identifier.urihttp://hdl.handle.net/11536/21800-
dc.identifier.urihttp://dx.doi.org/10.1149/2.003203sslen_US
dc.description.abstractHere, double-pattern textured gallium doped zinc oxide (GZO) films were achieved by inserting organosilicon underlayers deposited from an atmospheric pressure plasma jet (APPJ) between sputtered GZO films and glass substrates. The electro-optical characteristics of the textured GZO films were controlled by the haze of organosilicon underlayers. All GZO films were thermally annealed in high vacuum to improve film quality. Post-annealed textured GZO films exhibited an average optical transmittance of about 80% in a wide range. Hall measurements showed Hall mobility above 26 cm(2)/V-s, carrier concentration around 2.4 x 10(20) cm(-3) and resistivity below 9.91 x 10(-4) Omega-cm. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003203ssl] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleDouble-Pattern Textured ZnO:Ga Thin Films Fabricated by an APPJ and an DC Sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.003203sslen_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.citation.volume1en_US
dc.citation.issue3en_US
dc.citation.spageP48en_US
dc.citation.epageP50en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000318340000002-
dc.citation.woscount4-
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