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dc.contributor.authorLyu, Yang-Ruen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2014-12-08T15:30:31Z-
dc.date.available2014-12-08T15:30:31Z-
dc.date.issued2012en_US
dc.identifier.issn2162-8742en_US
dc.identifier.urihttp://hdl.handle.net/11536/21801-
dc.identifier.urihttp://dx.doi.org/10.1149/2.007202sslen_US
dc.description.abstractNanocomposite layers containing In2O3 quantum dots (QDs) with radii ranging from 1.8 to 5 nm embedded in SiO2 matrix were prepared. Prominent blueshift with a drastic increase in emission efficiency for red, green and blue emissions were observed in the photoluminescence (PL) spectra of samples when QD radius was less than 1.32 nm. PL enhancement was further confirmed by the calibration of defect trap levels and indicated the Bohr radius of In2O3 QDs was 1.32 nm. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.007202ssl] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titlePhotoluminescence Characteristics of In2O3 Quantum Dot (QD)-SiO2 Nanocomposite Thin Films Containing Various QD Sizesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.007202sslen_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.citation.volume1en_US
dc.citation.issue2en_US
dc.citation.spageR9en_US
dc.citation.epageR12en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000318339500021-
dc.citation.woscount1-
Appears in Collections:Articles


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