Photoluminescence Characteristics of In2O3 Quantum Dot (QD)-SiO2 Nanocomposite Thin Films Containing Various QD Sizes

doi:10.1149/2.007202ssl

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DC 欄位	值	語言
dc.contributor.author	Lyu, Yang-Ru	en_US
dc.contributor.author	Hsieh, Tsung-Eong	en_US
dc.date.accessioned	2014-12-08T15:30:31Z	-
dc.date.available	2014-12-08T15:30:31Z	-
dc.date.issued	2012	en_US
dc.identifier.issn	2162-8742	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21801	-
dc.identifier.uri	http://dx.doi.org/10.1149/2.007202ssl	en_US
dc.description.abstract	Nanocomposite layers containing In2O3 quantum dots (QDs) with radii ranging from 1.8 to 5 nm embedded in SiO2 matrix were prepared. Prominent blueshift with a drastic increase in emission efficiency for red, green and blue emissions were observed in the photoluminescence (PL) spectra of samples when QD radius was less than 1.32 nm. PL enhancement was further confirmed by the calibration of defect trap levels and indicated the Bohr radius of In2O3 QDs was 1.32 nm. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.007202ssl] All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Photoluminescence Characteristics of In2O3 Quantum Dot (QD)-SiO2 Nanocomposite Thin Films Containing Various QD Sizes	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/2.007202ssl	en_US
dc.identifier.journal	ECS SOLID STATE LETTERS	en_US
dc.citation.volume	1	en_US
dc.citation.issue	2	en_US
dc.citation.spage	R9	en_US
dc.citation.epage	R12	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000318339500021	-
dc.citation.woscount	1	-
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