The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Kuan-Chang	en_US
dc.contributor.author	Tsai, Tsung-Ming	en_US
dc.contributor.author	Chang, Ting-Chang	en_US
dc.contributor.author	Syu, Yong-En	en_US
dc.contributor.author	Liao, Kuo-Hsiao	en_US
dc.contributor.author	Chuang, Siang-Lan	en_US
dc.contributor.author	Li, Cheng-Hua	en_US
dc.contributor.author	Gan, Der-Shin	en_US
dc.contributor.author	Sze, Simon M.	en_US
dc.date.accessioned	2014-12-08T15:30:31Z	-
dc.date.available	2014-12-08T15:30:31Z	-
dc.date.issued	2012	en_US
dc.identifier.issn	2162-8742	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21802	-
dc.identifier.uri	http://dx.doi.org/10.1149/2.022202ssl	en_US
dc.language.iso	en_US	en_US
dc.title	The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)	en_US
dc.type	Correction	en_US
dc.identifier.doi	10.1149/2.022202ssl	en_US
dc.identifier.journal	ECS SOLID STATE LETTERS	en_US
dc.citation.volume	1	en_US
dc.citation.issue	2	en_US
dc.citation.spage	X1	en_US
dc.citation.epage	X1	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000318339500022	-
dc.citation.woscount	0	-
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