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dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorLiao, Kuo-Hsiaoen_US
dc.contributor.authorChuang, Siang-Lanen_US
dc.contributor.authorLi, Cheng-Huaen_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:30:31Z-
dc.date.available2014-12-08T15:30:31Z-
dc.date.issued2012en_US
dc.identifier.issn2162-8742en_US
dc.identifier.urihttp://hdl.handle.net/11536/21802-
dc.identifier.urihttp://dx.doi.org/10.1149/2.022202sslen_US
dc.language.isoen_USen_US
dc.titleThe Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)en_US
dc.typeCorrectionen_US
dc.identifier.doi10.1149/2.022202sslen_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.citation.volume1en_US
dc.citation.issue2en_US
dc.citation.spageX1en_US
dc.citation.epageX1en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000318339500022-
dc.citation.woscount0-
Appears in Collections:Articles


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