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dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorTsai, Wei-Chihen_US
dc.contributor.authorWang, Shui-Jinnen_US
dc.contributor.authorLin, Jia-Chuanen_US
dc.contributor.authorLee, I-Cheen_US
dc.contributor.authorChang, Chia-Tsungen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:30:31Z-
dc.date.available2014-12-08T15:30:31Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2011.4349en_US
dc.identifier.urihttp://hdl.handle.net/11536/21803-
dc.description.abstractA transparent ultraviolet (UV) sensor using nanoheterojunctions (NHJs) composed of p-type NiO nanoflowers (NFs) and n-type ZnO nanowires (NWs) was prepared through a sequential low-temperature hydrothermal-growth process. The devices that were annealed in an oxygen (O(2)) ambient exhibited better rectification behavior (l(forward)/l(reverse) = 427), a lower forward threshold voltage (V(th) = 0.98 V), a lower leakage current (1.68 x 10(-5) A/cm(2)), and superior sensitivity (l(UV)/l(dark) = 57.8; l(visible)/l(dark) = 1.25) to UV light (lambda = 325 nm) than the unannealed devices. The remarkably improved device performances and optoelectronic characteristics of the annealed p-NiO-NF/n-ZnO-NW NHJs can be associated with their fewer structural defects, fewer interfacial defects, and better crystallinity. A stable and repeatable operation of dynamic photoresponse was also observed in the annealed devices. The excellent sensitivity and repeatable photoresponse to UV light of the hydrothermally grown p-NiO-NF/n-ZnO-NW NHJs annealed in a suitable O(2) ambient indicate that they can be applied to nano-integrated optoelectronic devices.en_US
dc.language.isoen_USen_US
dc.subjectUltraviolet (UV) Photodetectoren_US
dc.subjectHydrothermal Methoden_US
dc.subjectNanoheterojunction (NHJ)en_US
dc.subjectNanoflower (NF)en_US
dc.subjectNanowire (NW)en_US
dc.titleEffect of Oxygen Annealing on the Ultraviolet Photoresponse of p-NiO-Nanoflower/n-ZnO-Nanowire Heterostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2011.4349en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.issue7en_US
dc.citation.spage5737en_US
dc.citation.epage5743en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000293663200025-
dc.citation.woscount8-
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