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dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorLin, Woei-Tyngen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorChang, Lien_US
dc.contributor.authorHsiao, Chien-Nanen_US
dc.contributor.authorChiang, Chung-Haoen_US
dc.date.accessioned2014-12-08T15:30:32Z-
dc.date.available2014-12-08T15:30:32Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2011.01.047en_US
dc.identifier.urihttp://hdl.handle.net/11536/21824-
dc.description.abstractIn this paper, high-quality wurtzite indium nitride was epi-grown on sapphire substrates by plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and electrical properties of the InN films were significantly improved by employing a GaN buffer layer. In addition, high-resolution X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy (TEM), Hall Effect, Raman and photoluminescence spectroscopy were carried out to characterize the effect of the growth temperature on structural and optoelectronic properties. It was found that highly c-axis oriented InN epilayer can be obtained by optimizing growth conditions. TEM images reveal that the epitaxially grown InN/GaN interface is sharp, and the spacing of the InN(0 0 0 2) lattice plane is about 0.57 nm. Raman spectra also show a sharp peak at 491 cm(-1) attributed to the E(2)(high) mode of wurtzite InN. These results indicate that the improvement of InN material quality can be achieved using heteroepitaxy on GaN/sapphire templates. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMetalorganic molecular beam epitaxyen_US
dc.subjectNitridesen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectSemiconducting III-V materialsen_US
dc.titleHeteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBEen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2011.01.047en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume326en_US
dc.citation.issue1en_US
dc.citation.spage37en_US
dc.citation.epage41en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000293483800009-
dc.citation.woscount4-
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