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dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorHo, Po-Chingen_US
dc.contributor.authorYu, Shu-Hungen_US
dc.contributor.authorHsu, Jui-Meien_US
dc.contributor.authorYang, Kuo-Huien_US
dc.contributor.authorWu, Chin-Jyien_US
dc.contributor.authorChang, Chia-Chiangen_US
dc.date.accessioned2014-12-08T15:30:33Z-
dc.date.available2014-12-08T15:30:33Z-
dc.date.issued2013-07-01en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2013.03.165en_US
dc.identifier.urihttp://hdl.handle.net/11536/21838-
dc.description.abstractOne of the essential applications of transparent conductive oxides is as front electrodes for superstrate silicon thin-film solar cells. Textured TCO thin films can improve absorption of sunlight for an a-Si:H absorber during a single optical path. In this study, high-haze and low-resistivity bilayer GZO/SiOx thin films prepared using an atmospheric pressure plasma jet (APPJ) deposition technique and dc magnetron sputtering. The silicon subdioxide nano-film plays an important role in controlling the haze value of subsequent deposited GZO thin films. The bilayer GZO/SiOx (90 sccm) sample has the highest haze value (22.30%), the lowest resistivity (8.98 x 10(-4) Omega cm), and reaches a maximum cell efficiency of 6.85% (enhanced by approximately 19% compared to a sample of non-textured GZO). (c) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAtmospheric pressure plasmaen_US
dc.subjectLight-trapping effecten_US
dc.subjectTransparent conductive oxideen_US
dc.titleUsing SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.apsusc.2013.03.165en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume276en_US
dc.citation.issueen_US
dc.citation.spage756en_US
dc.citation.epage760en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000318979800108-
dc.citation.woscount6-
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