完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Kow-Ming | en_US |
dc.contributor.author | Ho, Po-Ching | en_US |
dc.contributor.author | Yu, Shu-Hung | en_US |
dc.contributor.author | Hsu, Jui-Mei | en_US |
dc.contributor.author | Yang, Kuo-Hui | en_US |
dc.contributor.author | Wu, Chin-Jyi | en_US |
dc.contributor.author | Chang, Chia-Chiang | en_US |
dc.date.accessioned | 2014-12-08T15:30:33Z | - |
dc.date.available | 2014-12-08T15:30:33Z | - |
dc.date.issued | 2013-07-01 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2013.03.165 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21838 | - |
dc.description.abstract | One of the essential applications of transparent conductive oxides is as front electrodes for superstrate silicon thin-film solar cells. Textured TCO thin films can improve absorption of sunlight for an a-Si:H absorber during a single optical path. In this study, high-haze and low-resistivity bilayer GZO/SiOx thin films prepared using an atmospheric pressure plasma jet (APPJ) deposition technique and dc magnetron sputtering. The silicon subdioxide nano-film plays an important role in controlling the haze value of subsequent deposited GZO thin films. The bilayer GZO/SiOx (90 sccm) sample has the highest haze value (22.30%), the lowest resistivity (8.98 x 10(-4) Omega cm), and reaches a maximum cell efficiency of 6.85% (enhanced by approximately 19% compared to a sample of non-textured GZO). (c) 2013 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Atmospheric pressure plasma | en_US |
dc.subject | Light-trapping effect | en_US |
dc.subject | Transparent conductive oxide | en_US |
dc.title | Using SiOx nano-films to enhance GZO Thin films properties as front electrodes of a-Si solar cells | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2013.03.165 | en_US |
dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
dc.citation.volume | 276 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 756 | en_US |
dc.citation.epage | 760 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000318979800108 | - |
dc.citation.woscount | 6 | - |
顯示於類別: | 期刊論文 |