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dc.contributor.authorLiu, Junen_US
dc.contributor.authorYabushita, Atsushien_US
dc.contributor.authorTaniguchi, Seijien_US
dc.contributor.authorChosrowjan, Haiken_US
dc.contributor.authorImamoto, Yasushien_US
dc.contributor.authorSueda, Keiichien_US
dc.contributor.authorMiyanaga, Noriakien_US
dc.contributor.authorKobayashi, Takayoshien_US
dc.date.accessioned2014-12-08T15:30:39Z-
dc.date.available2014-12-08T15:30:39Z-
dc.date.issued2013-05-02en_US
dc.identifier.issn1520-6106en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp4001016en_US
dc.identifier.urihttp://hdl.handle.net/11536/21885-
dc.description.abstractImpulsive excitation, of molecular vibration is known to induce wave packets in both the ground state, and excited State. Here, the ultrafast dynamics of PIP was studied by pump probe spectroscopy using a sub-8 fs pulse laser at 400 nm. The broadband spectrum of the UV pulse allowed us to detect the pump probe signal covering 360-440 nm. The dependence of the vibrational phase of the vibrational mode around 1155 cm(-1) on the probe photon energy was observed for the first time to our knowledge. The vibrational mode coupled to the electronic transition observed in the probe spectral ranges of 2.95-3.05 and 3.1573.35 eV was attributed to the. wave packets in the ground state and the excited state, respectively.: The frequencies in the ground state and excited state were determined: to be 1155 +/- 1 and 1149 +/- 1 cm(-1), respectively. The frequency difference is due to change after photoexcitation; This means a reduction of the bond strength associated with pi-pi* excitation, :which is related to the molecular structure. change associated with the primary isomerization process in the photocycle in PYP. Real time vibrational modes at low frequency around 138, 179, 203, 260, and 317 cm(-1) were also observed and compared with, the Raman spectrum for the assignment of the vibrational wave packet.en_US
dc.language.isoen_USen_US
dc.titleUltrafast Time-Resolved Pump-Probe Spectroscopy of PYP by a Sub-8 fs Pulse Laser at 400 nmen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp4001016en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Ben_US
dc.citation.volume117en_US
dc.citation.issue17en_US
dc.citation.spage4818en_US
dc.citation.epage4826en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000318536700010-
dc.citation.woscount3-
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