完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHANG, TC | en_US |
dc.contributor.author | CHANG, CY | en_US |
dc.contributor.author | JUNG, TG | en_US |
dc.contributor.author | CHEN, PA | en_US |
dc.contributor.author | TSAI, WC | en_US |
dc.contributor.author | WANG, PJ | en_US |
dc.contributor.author | CHEN, YF | en_US |
dc.contributor.author | PAN, SC | en_US |
dc.date.accessioned | 2014-12-08T15:03:39Z | - |
dc.date.available | 2014-12-08T15:03:39Z | - |
dc.date.issued | 1994-12-01 | en_US |
dc.identifier.issn | 0957-4522 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/BF00215576 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2188 | - |
dc.description.abstract | Well-resolved band-edge luminescence is observed for Si0.86Ge0.14/Si strained-layer superlattices grown by an ultrahigh vacuum/chemical vapour deposition technique at 550 degrees C. High-resolution double-crystal X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM) were used to determine the strain and other parameters for these strained-layer superlattices. Quantum confinement is observed for a SiGe well as thin as 1.3 nm. The blue shift of the emission peaks with decreasing well width is found to be in good agreement with theoretical calculation. | en_US |
dc.language.iso | en_US | en_US |
dc.title | QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/BF00215576 | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 370 | en_US |
dc.citation.epage | 374 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:A1994PZ43900012 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |