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dc.contributor.authorCHANG, TCen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorJUNG, TGen_US
dc.contributor.authorCHEN, PAen_US
dc.contributor.authorTSAI, WCen_US
dc.contributor.authorWANG, PJen_US
dc.contributor.authorCHEN, YFen_US
dc.contributor.authorPAN, SCen_US
dc.date.accessioned2014-12-08T15:03:39Z-
dc.date.available2014-12-08T15:03:39Z-
dc.date.issued1994-12-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF00215576en_US
dc.identifier.urihttp://hdl.handle.net/11536/2188-
dc.description.abstractWell-resolved band-edge luminescence is observed for Si0.86Ge0.14/Si strained-layer superlattices grown by an ultrahigh vacuum/chemical vapour deposition technique at 550 degrees C. High-resolution double-crystal X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM) were used to determine the strain and other parameters for these strained-layer superlattices. Quantum confinement is observed for a SiGe well as thin as 1.3 nm. The blue shift of the emission peaks with decreasing well width is found to be in good agreement with theoretical calculation.en_US
dc.language.isoen_USen_US
dc.titleQUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUEen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/BF00215576en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume5en_US
dc.citation.issue6en_US
dc.citation.spage370en_US
dc.citation.epage374en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994PZ43900012-
dc.citation.woscount2-
顯示於類別：期刊論文


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