完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hong Quan Nguyen | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.contributor.author | Yu, Hung Wei | en_US |
dc.contributor.author | Lin, Kung Liang | en_US |
dc.contributor.author | Chung, Chen Chen | en_US |
dc.date.accessioned | 2014-12-08T15:30:40Z | - |
dc.date.available | 2014-12-08T15:30:40Z | - |
dc.date.issued | 2011-07-01 | en_US |
dc.identifier.issn | 1882-0778 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/APEX.4.075501 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21892 | - |
dc.description.abstract | In(0.3)Ga(0.7)As layers were grown by metalorganic chemical vapor deposition using step graded buffer layers on different misoriented GaAs(001) substrates. Smooth-surface In(0.3)Ga(0.7)As film with a root mean square roughness of 1.9 nm was obtained with the growth temperature of 490 degrees C using a 10-step graded parabolic-like indium profile buffer layer on the surface with the 6 degrees-off cut toward the [111] direction. The threading dislocation density in the film was determined to be 1.2 x 10(6) cm(-2) by transmission electron microscopy. The photoluminescence results obtained at 300 and 77K indicate that very low recombination centers existed in the epilayer. (C) 2011 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | High-Quality 1 eV In(0.3)Ga(0.7)As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/APEX.4.075501 | en_US |
dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | en_US | |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
顯示於類別: | 期刊論文 |