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dc.contributor.authorTsai, C. Y.en_US
dc.contributor.authorChen, H. R.en_US
dc.contributor.authorChang, F. C.en_US
dc.contributor.authorTsai, W. C.en_US
dc.contributor.authorCheng, H. M.en_US
dc.contributor.authorChu, Y. H.en_US
dc.contributor.authorLai, C. H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.date.accessioned2014-12-08T15:30:43Z-
dc.date.available2014-12-08T15:30:43Z-
dc.date.issued2013-04-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4800069en_US
dc.identifier.urihttp://hdl.handle.net/11536/21940-
dc.description.abstractThis study reports a self-assembled multiferroic nanostructure, composed of PbTiO3 (PTO) pillars embedded in a CoFe2O4 (CFO) matrix, deposited on MgO(001) by pulsed laser deposition. The epitaxial relationship in the PTO-CFO nanostructure is (100) [101](PTO) parallel to (001) [101](CFO) parallel to (001) [101](MgO), confirming the in-plane aligned polarization of PTO. The perpendicular magnetic anisotropy of this thin film results from the magnetoelastic anisotropy that exceeds the shape anisotropy. The increased frequency and the enhanced intensity of the tetrahedral (T-) site phonon modes by increasing the magnetic field indicate strong magnetoelastic coupling through magnetostriction in this multiferroic nanostructure. The anisotropic Raman strength enhancement of the T-site phonon along different directions suggests the magnetoelastic coupling is most efficient in the in-plane direction. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4800069]en_US
dc.language.isoen_USen_US
dc.titleStress-mediated magnetic anisotropy and magnetoelastic coupling in epitaxial multiferroic PbTiO3-CoFe2O4 nanostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4800069en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume102en_US
dc.citation.issue13en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000317240200066-
dc.citation.woscount8-
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