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dc.contributor.authorYin, Junen_US
dc.contributor.authorYue, Chuangen_US
dc.contributor.authorZang, Yashuen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLi, Jinchaien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWu, Zhihaoen_US
dc.contributor.authorLi, Jingen_US
dc.contributor.authorFang, Yanyanen_US
dc.contributor.authorChen, Changqingen_US
dc.date.accessioned2014-12-08T15:30:44Z-
dc.date.available2014-12-08T15:30:44Z-
dc.date.issued2013en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://hdl.handle.net/11536/21962-
dc.identifier.urihttp://dx.doi.org/10.1039/c3nr00920cen_US
dc.description.abstractThe effect of direct metal coating on the photoluminescence (PL) properties of ZnO nanorods (NRs) has been investigated in detail in this work. The direct coating of Ag nanoparticles (NPs) induces remarkable enhancement of the surface exciton (SX) emissions from the ZnO NRs. Meanwhile, the charge transfer process between ZnO and Ag also leads to notable increment of blue and violet emissions from Zn interstitial defects. A thin SiO2 blocking layer inserted between the ZnO and Ag has been demonstrated to be able to efficiently suppress the defect emission enhancement caused by the direct contact of metal-semiconductor, without weakening the surface-plasmon-exciton coupling effect. A theoretical model considering the type of contacts formed between metals, ZnO and blocking layer is proposed to interpret the change of the PL spectra.en_US
dc.language.isoen_USen_US
dc.titleEffect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c3nr00920cen_US
dc.identifier.journalNANOSCALEen_US
dc.citation.volume5en_US
dc.citation.issue10en_US
dc.citation.spage4436en_US
dc.citation.epage4442en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000318362400057-
dc.citation.woscount9-
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