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dc.contributor.authorChen, Ying-Jiunen_US
dc.contributor.authorHsieh, Ying-Huien_US
dc.contributor.authorLiao, Sheng-Chiehen_US
dc.contributor.authorHu, Zhiweien_US
dc.contributor.authorHuang, Meng-Jieen_US
dc.contributor.authorKuo, Wei-Chengen_US
dc.contributor.authorChin, Yi-Yingen_US
dc.contributor.authorUen, Tzeng-Mingen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorLai, Chih-Huangen_US
dc.contributor.authorLin, Hong-Jien_US
dc.contributor.authorChen, Chien-Teen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2014-12-08T15:30:44Z-
dc.date.available2014-12-08T15:30:44Z-
dc.date.issued2013en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://hdl.handle.net/11536/21963-
dc.identifier.urihttp://dx.doi.org/10.1039/c3nr00104ken_US
dc.description.abstractIn the past decade, self-assembled vertical nano-heterostructures have drawn considerable attention because a high interface-to-volume ratio can be used to tailor or create functionalities. We have systematically investigated the magnetic properties of oxide heterostructures consisting of the CoFe2O4 nanopillars embedded in the BiFeO3 matrix using macroscopic magnetization measurements and element-selective soft X-ray absorption magnetic circular dichroism (XMCD) at the Co- and Fe-L-2,L-3 edge. The magnetization and XMCD data show that the total ordered magnetic moment of Co2+ in CoFe2O4-BiFeO3 nano-heterostructures is strongly enhanced. This study clearly indicates that the high interface-to-volume ratio vertical nanostructure creates a strong ferromagnetic and antiferromagnetic magnetic coupling via an interface. Furthermore, the magnetic coupling can be tuned in the multiferroic-ferrimagnetic self-assembled heterostructures by controlling the spacing between nanopillars.en_US
dc.language.isoen_USen_US
dc.titleStrong magnetic enhancement in self-assembled multiferroic-ferrimagnetic nanostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c3nr00104ken_US
dc.identifier.journalNANOSCALEen_US
dc.citation.volume5en_US
dc.citation.issue10en_US
dc.citation.spage4449en_US
dc.citation.epage4453en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000318362400059-
dc.citation.woscount7-
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