Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Hsun-Wen	en_US
dc.contributor.author	Yu, Pei-Chen	en_US
dc.contributor.author	Han, Hau-Vei	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lin, Shiuan-Huei	en_US
dc.date.accessioned	2014-12-08T15:30:45Z	-
dc.date.available	2014-12-08T15:30:45Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-4841-6	en_US
dc.identifier.issn	2159-3523	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21971	-
dc.description.abstract	In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24,32 % when the major absorption region contains 65% of indium composition..	en_US
dc.language.iso	en_US	en_US
dc.title	Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC)	en_US
dc.citation.spage	143	en_US
dc.citation.epage	145	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000319409400044	-
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