Investigation into the Performance of CNT-Interconnects by Spin Coating Technique

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DC Field	Value	Language
dc.contributor.author	Chiu, Wei-Chih	en_US
dc.contributor.author	Tsui, Bing-Yue	en_US
dc.date.accessioned	2014-12-08T15:30:45Z	-
dc.date.available	2014-12-08T15:30:45Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-4841-6	en_US
dc.identifier.issn	2159-3523	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21974	-
dc.description.abstract	In this work, we proposed a simple fabrication process, spin coating and dry etching, to construct CNT-interconnects. The CNT-interconnects formed by the slow rate spin coating method have conductivity of more than 10(2) (Stein) and the CNT-interconnects with 10(2) square numbers possess about 30% conductive probability. In addition, we inserted metal bridges into 1000-mu m-long CNT-interconnects to effectively facilitate the performance.	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation into the Performance of CNT-Interconnects by Spin Coating Technique	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC)	en_US
dc.citation.spage	240	en_US
dc.citation.epage	241	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000319409400075	-
Appears in Collections:	Conferences Paper