Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Ta-Chun | en_US |
dc.contributor.author | Li, Liang-Chen | en_US |
dc.contributor.author | Lin, Sheng-Di | en_US |
dc.contributor.author | Suen, Yuen-Wuu | en_US |
dc.contributor.author | Lee, Chien-Ping | en_US |
dc.date.accessioned | 2014-12-08T15:30:46Z | - |
dc.date.available | 2014-12-08T15:30:46Z | - |
dc.date.issued | 2011-07-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3607973 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21980 | - |
dc.description.abstract | We report the magneto-photoluminescence (PL) measurement results on type-II self-assembled GaSb/GaAs quantum dots with the magnetic field applied in Faraday and Voigt configurations. The emission of the quantum dots exhibited a typical diamagnetic blueshift when the magnetic field was applied in a Faraday configuration. However, when the magnetic field was in the Voigt configuration, an unusual redshift in the emission peak accompanied with a rapid increase of the PL intensity was observed. Guided by numerical calculations, the magnetic field applied in the Voigt configuration is found to provide an additional vertical confinement to electrons, and therefore, substantially enhance the radiative electron-hole recombination. The resulting decrease of the steady-state hole concentration gives rise to the observed anomalous magnetic redshift. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607973] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Anomalous optical magnetic shift of self-assembled GaSb/GaAs quantum dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3607973 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 110 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 奈米科技中心 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Center for Nanoscience and Technology | en_US |
dc.identifier.wosnumber | WOS:000292776500039 | - |
dc.citation.woscount | 2 | - |
Appears in Collections: | Articles |
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