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dc.contributor.authorLin, Ta-Chunen_US
dc.contributor.authorLi, Liang-Chenen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorSuen, Yuen-Wuuen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2014-12-08T15:30:46Z-
dc.date.available2014-12-08T15:30:46Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3607973en_US
dc.identifier.urihttp://hdl.handle.net/11536/21980-
dc.description.abstractWe report the magneto-photoluminescence (PL) measurement results on type-II self-assembled GaSb/GaAs quantum dots with the magnetic field applied in Faraday and Voigt configurations. The emission of the quantum dots exhibited a typical diamagnetic blueshift when the magnetic field was applied in a Faraday configuration. However, when the magnetic field was in the Voigt configuration, an unusual redshift in the emission peak accompanied with a rapid increase of the PL intensity was observed. Guided by numerical calculations, the magnetic field applied in the Voigt configuration is found to provide an additional vertical confinement to electrons, and therefore, substantially enhance the radiative electron-hole recombination. The resulting decrease of the steady-state hole concentration gives rise to the observed anomalous magnetic redshift. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607973]en_US
dc.language.isoen_USen_US
dc.titleAnomalous optical magnetic shift of self-assembled GaSb/GaAs quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3607973en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume110en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000292776500039-
dc.citation.woscount2-
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