完整後設資料紀錄
DC 欄位語言
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorChang, Mau-Chung Franken_US
dc.date.accessioned2014-12-08T15:30:46Z-
dc.date.available2014-12-08T15:30:46Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4577-1330-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/21996-
dc.description.abstractAn alternative approach for 60 GHz transceiver is proposed in this invited paper. The proposed 60 GHz transceiver has GaAs LNA/PA at the front end and the rest of the transceiver is realized in a low-cost foundry CMOS technology with the help of Schottky diode. The 60 GHz transceiver by 65-nm CMOS technology did not show adequate performance and suffers from high R&D cost because of the expensive photo masks while a transceiver based on the GaAs technology is plagued with the high manufacturing cost even though the noise figure of LNA and PAE of PA are good. The recent demonstrated down-/up-converters using Schottky diode in 0.18 mu m CMOS process by our group sheds light on this alternative approach for millimeter-wave transceivers.en_US
dc.language.isoen_USen_US
dc.subject60 GHzen_US
dc.subjectmillimeter-wave transceiveren_US
dc.subjectCMOSen_US
dc.subjectsilicon Schottky diodeen_US
dc.subjectdual conversionen_US
dc.subjectdown converteren_US
dc.subjectup converteren_US
dc.title60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 mu m CMOS Process: An Alternative Approach for Millimeter-Wave Transceiver (Invited Talk)en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012)en_US
dc.citation.spage658en_US
dc.citation.epage660en_US
dc.contributor.department電機資訊學士班zh_TW
dc.contributor.departmentUndergraduate Honors Program of Electrical Engineering and Computer Scienceen_US
dc.identifier.wosnumberWOS:000319213700217-
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