完整後設資料紀錄
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dc.contributor.authorLin, Jie Anen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:30:49Z-
dc.date.available2014-12-08T15:30:49Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-1638-5en_US
dc.identifier.issn2150-5934en_US
dc.identifier.urihttp://hdl.handle.net/11536/22019-
dc.description.abstractTo investigate the thermomigration issue in flip-chip solder bumps, eutectic SnPb solder joints with typical dimensions were adopted. To observe the temperature distribution in solder joint during current stressing, infrared microscopy was employed. The bumps were powered by a desired current. Then temperature measurement was performed to record the temperature distribution (map) at the steady state. The temperatures in the solder joints were mapped by a QFI thermal infrared microscope. Solder joints were stressed at 1.88 Amp at room temperature for 3, 6 and 10 hours, respectively. An alternating current (AC) is employed to distinguish electromigration and thermomigration effects. The changes in the intermetallic compound (IMC) microstructure were observed with scanning electron microscope (SEM) under thermomigrationt. In this study, IMC formation plays an important role at solder joint during thermomigration phenomenon at room temperature. As stress time increased, IMC grew thicker rapidly. The IMC is thickening at the hot side is a result of temperature and diffusion driving forces.en_US
dc.language.isoen_USen_US
dc.titleThermomigration in eutectic-SnPb solder with Cu UBM at the room temperatureen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 7TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000319528300071-
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