完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, J. Y.en_US
dc.contributor.authorSun, K. W.en_US
dc.date.accessioned2014-12-08T15:30:52Z-
dc.date.available2014-12-08T15:30:52Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-3543-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/22032-
dc.description.abstractWe have investigated solution-grown ZnO nanorod arrays as the anti-reflection(AR) layer for Si solar cells. The nanorod morphology, controlled through synthetic chemistry, has a great effect on the AR layer performance. We demonstrate that the light harvest efficiency of the solar cells can be greatly improved from 10.4% to 12.8% by using the vertical aligned ZnO nanorod arrays as the AR layer on poly-Si solar cells.en_US
dc.language.isoen_USen_US
dc.titleGrowth of Vertically Aligned ZnO Nanorod Arrays as Anti-reflection Layer in Silicon Solar Cellen_US
dc.typeArticleen_US
dc.identifier.journalINEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2en_US
dc.citation.spage1078en_US
dc.citation.epage1079en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000282026500550-
顯示於類別:會議論文