完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, J. Y. | en_US |
dc.contributor.author | Sun, K. W. | en_US |
dc.date.accessioned | 2014-12-08T15:30:52Z | - |
dc.date.available | 2014-12-08T15:30:52Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.isbn | 978-1-4244-3543-2 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22032 | - |
dc.description.abstract | We have investigated solution-grown ZnO nanorod arrays as the anti-reflection(AR) layer for Si solar cells. The nanorod morphology, controlled through synthetic chemistry, has a great effect on the AR layer performance. We demonstrate that the light harvest efficiency of the solar cells can be greatly improved from 10.4% to 12.8% by using the vertical aligned ZnO nanorod arrays as the AR layer on poly-Si solar cells. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Growth of Vertically Aligned ZnO Nanorod Arrays as Anti-reflection Layer in Silicon Solar Cell | en_US |
dc.type | Article | en_US |
dc.identifier.journal | INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | en_US |
dc.citation.spage | 1078 | en_US |
dc.citation.epage | 1079 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000282026500550 | - |
顯示於類別: | 會議論文 |